Alina Caddemi’s Home Page
Caddemi received the degree
in Electronic Engineering (honors) and the PH.D degree from the University of
Palermo, Palermo, Italy, in 1982 and in 1987, respectively. From 1990 to 1998,
she was with the Department of Electrical Engineering, University of Palermo, as an assistant
professor in the field of Microwave Electronics with a strong concern for the
characterization and modeling of low-noise components and circuits. In 1998 she joined the University of Messina,
Messina, Italy, as an associate professor of Optoelectronics. Her current
research interests are in the field of temperature-dependent linear and noise
characterization techniques for solid-state devices, cryogenic measurements on
HEMT's for radio-astronomy applications, noisy circuit modeling of bipolar and
field-effect transistors, neural network modeling of devices, design and
realization of hybrid low-noise circuits based on traditional and
super-conductive materials, characterization and modeling of thin-film sensors.
Next year (Autumn 2003) she will be the Scientific Coordinator of a Master Course in Microwave Systems and Technologies for
Telecommunications. Activities of the MECSA Unit at the Microwave Measurement and
Circuit Lab at the University of Messina (Prof. A. Caddemi, Ing. N. Donato):
of packaged and on wafer devices/circuits as a function of frequency, bias and
temperature down to cryogenic levels. Noise figure, 1/f noise and phase noise
measurements on devices and circuits
Development and implementation of device circuit modeling
procedures based on: a) parameter optimization; b) direct extraction methods;
c) neural network determination
Extraction of noisy models of FET’s, BJT’s and HBT’s
Development and implementation of neural networks for noise parameter
extraction of microwave FET’s
Design of low-noise HMIC’s employing either conventional or
Istituto di Radioastronomia CNR – Noto. Italy
Dipartimento di Fisica e Tecnologie Relative – Università di Palermo
Infineon Technologies AG – Monaco, DE
Ericsson Telecomunicazioni Italia SpA – Milano, Italy
Marconi Mobile – Catania/Genova,
ST Microelectronics – Catania, Italy
Wireless and Microwave Lab – University of South Florida, USA
Faculty of Electronic Engineering,
University of Nîs, Yugoslavia
Caddemi, G. Martines, M. Sannino, "HEMTs
for low-noise microwaves: CAD-oriented modeling", IEEE
Trans. on Microwave Theory Tech. , Vol. MTT-40, pp. 1441-1445, July
- A. Caddemi,
G. Martines, M. Sannino,
" Automatic characterization
and modeling of microwave low-noise HEMTs", IEEE Trans. on Instr. and
Measurement, Vol. IM- 41, pp. 946-950, Dec. 1992.
- A. Caddemi,
" Modeling of low-noise microwave HEMTs for CAD-oriented applications", Int.
J. Microwave Millimeter -Wave Computer-Aided Engineering , Vol.12, pp. 29-36, Jan. 1993.
- A. Caddemi, G. Gambino, M. Sannino,
"Optimization process models
active microwave devices", Microwaves
& RF , pp.
95-97, Feb. 1993.
- A. Caddemi,
M. Sannino, " CAD-oriented noisy small-signal models of
Engineering Europe ,
pp.45-48, Feb. 1994.
- A. Caddemi, M.
Sannino, "Small-signal and noise model
determination for double polysilicon self-aligned bipolar
transistors", Active and
Passive Electronics Components, Vol.17, pp.
167-175, Dec. 1994.
Caddemi, M. Sannino, G. Mogavero,
models of pseudo-morphic HEMTs", Int. J. Comp. Math.
Electr. Electronic Eng., Vol.13,
N.4, pp.807-815, Dec. 1994.
- A. Caddemi, M. Sannino, "Bias-dependent
noisy characterization and modeling of polysilicon BJT's
for wireless communication systems" (invited) , Microwave Journal, Vol. 38, pp. 204-218, April
Caddemi, G. Martines, M. Sannino, "Noisy characterization for
CAD-oriented modeling of a pseudomorphic
HEMT series vs. frequency
and temperature", (invited) published
in Recent Research Developments
in Biological Cybernetics (invited), edited by Scientific Information Guild,
Trivandrum, India, Vol.1, pp.9-20, 1996.
- A. Caddemi, M. Sannino, "Typical aspects of
the microwave noise performance of HEMT's at decreasing
temperatures", Journal de Physique
IV, Coll.3, pp. 151-156, April 1996.
Caddemi, M. Sannino, "Noise parameters of
HEMTs: Analysis of
their properties from
a circuit model approach", Int. J. Comp. Math. Electr. Electronic Eng., Vol. 15, n.3, pp. 47-57, 1996.
- A. Caddemi, F. Di Prima, M. Sannino,
"Influence of the
temperature on the
equivalent noise resistance of HEMT's at
(invited) Microelectronics Journal, Vol. 29, n.10,
pp.709-713, Oct. I998.
- A. Caddemi, A. Di Paola, M. Sannino,
"Determination of HEMT's noise parameters vs. temperature using two
measurement methods", IEEE Trans. on Instr. and Measurement , Vol.IM-47, pp.6-10,
- A. Caddemi, A. Di Paola, M. Sannino, “Fast and efficient
procedures for determining the
microwave noise parameters of HEMT’s at decreasing temperatures”, Journal de Physique IV, Vol. 8, pp. 135-138, 1998.
- A. Caddemi, N. Donato, “On the performance of the
noise resistance of field-effect transistors at microwave frequencies”, Fluctuation and Noise Letters, Vol. 1, n.3, pp. R151-R161, 2001.
- A. Caddemi, N. Donato, “Temperature-dependent
characterization and modeling of on wafer microwave transistors”, Microelectronics Reliability,
Vol.42, pp.361-366, Apr. 2002.
- G. Ferrante, F.
Principato, A. Caddemi , N. Donato, G. Tuccari, “DC and 1/f noise characterization
of cryogenically cooled pseudomorphic HEMT’s”, Journal de Physique
IV, Vol.8, pp. Pr3/117-120, June 2002.
A. Caddemi, N. Donato, “Characterization
techniques for temperature-dependent experimental analysis of microwave transistors”, to appear on IEEE
Trans. on Instr. and
Measurement, Vol. IM-52,